Methods of Forming Reticles

ABSTRACT

The invention includes reticle constructions and methods of forming reticle constructions. In a particular aspect, a method of forming a reticle includes provision of a reticle substrate having a defined main-field region and a defined boundary region. The substrate has a relatively transparent base and a relatively opaque material over the base. A thickness of the relatively opaque material of the main-field region is reduced relative to a thickness of the relatively opaque material of the boundary region. A reticle construction of the present invention can comprise a relatively transparent base, and a relatively opaque material over the base. The construction can have a defined main-field region and a defined boundary region, and the relatively opaque material of the main-field region can have a reduced thickness relative to the relatively opaque material of the boundary region.

TECHNICAL FIELD

The invention pertains to methods of forming reticles, and also pertainsto reticle constructions.

BACKGROUND OF THE INVENTION

Radiation patterning tools are utilized during semiconductor processingto pattern radiation (such as, for example, ultraviolet light). Thepatterned radiation is projected against a radiation-imageable material(such as, for example, photoresist) and utilized to create a pattern inthe radiation-imageable material. The utilization of patterned radiationfor forming a desired pattern in a radiation-imageable material istypically referred to as photolithography. The radiation-patterningtools can be referred to as photomasks or reticles. The term “photomask”is traditionally understood to refer to masks which define a pattern foran entirety of a wafer, and the term “reticle” is traditionallyunderstood to refer to a patterning tool which defines a pattern foronly a portion of a wafer. However, the terms “photomask” (or moregenerally “mask”) and “reticle” are frequently used interchangeably inmodern parlance, so that either term can refer to a radiation-patterningtool that encompasses either a portion or an entirety of a wafer. Forpurposes of interpreting this disclosure and the claims that follow, theterm “reticle” is utilized to generally refer to anyradiation-patterning tool, regardless of whether the tool is utilized topattern an entirety of a substrate or only a portion of the substrate.

An exemplary method of utilizing a reticle to pattern radiation isdescribed with reference to FIG. 1. A reticle construction 10 is shownprovided above a semiconductor substrate 12. The substrate 12 has aradiation-imageable material 14 thereover. Radiation 16 is passedthrough reticle construction 10. The radiation is patterned byconstruction 10 to form a desired radiation pattern which is directedtoward radiation-imageable material 14 and ultimately is utilized toform a desired image within the radiation-imageable material. Thedesired image can include a pattern for forming semiconductor circuitelements, such as, for example, a pattern which can be transferred toone or more materials underlying the radiation-imageable material 14 toform patterned electrically conductive circuit elements (for instance,source/drain regions, wordlines, bitlines, capacitor electrodes, etc.)and/or patterned electrically insulative circuit elements (for instance,gate dielectric, capacitor dielectric, etc.).

The reticle construction 10 comprises a base 18, projecting features 20,and windows 22 between the projecting features. The projecting featurescan comprise phase-shifting material (such as, for example, siliconnitride, silicon oxynitride, molybdenum silicide and/orMo_(w)Si_(x)N_(y)O_(z), where w, x, y and z are numbers greater thanzero), and/or opaque material (such as, for example, chromium). Theprojecting features 20 and the windows 22 together create the pattern inthe radiation passing through reticle construction.

Only a fragment of the reticle construction 10 is shown in FIG. 1, andsuch fragment is part of a so-called main-field portion of the reticle.The main-field portion is a part of the reticle having windows thereinfor patterning radiation to ultimately form circuit elements associatedwith a semiconductor assembly. The reticle will typically also have aboundary portion extending around the main-field portion. The boundaryportion has the primary function of blocking the light, but can havesome patterned regions therein corresponding to non-circuit elements(i.e., patterned regions which do not form circuit elements associatedwith a semiconductor assembly). The patterned regions can be utilizedfor, among other things, calibration and mask alignment.

FIG. 2 shows a view from the bottom of the reticle construction 10, anddiagrammatically illustrates the full construction to show that thereticle comprises a main-field region 30 containing the projectingfeatures 20 and windows 22, and comprises a boundary region 32surrounding the main-field region. The boundary region 32 will typicallybe covered by an opaque material (such as, for example, chromium) sothat the boundary region blocks light from passing therethrough.

A continuing goal of semiconductor fabrication is to increase thedensity of structures formed across a semiconductor substrate (i.e., toincrease the level of integration), which spawns a continuing goal toimprove fabrication of the reticles utilized for patterningsemiconductor substrates. Accordingly, it is desired to develop improvedreticle constructions, and improved methods for forming reticleconstructions.

SUMMARY OF THE INVENTION

In one aspect, the invention encompasses a method of forming a reticle.A reticle substrate is provided. The reticle substrate has a relativelytransparent base and a relatively opaque material over the base. Thesubstrate comprises a main-field region where windows utilized forpatterning circuit elements of semiconductor constructions are to beformed, and a boundary region where windows utilized for patterningcircuit elements of semiconductor constructions will not be formed. Themain-field region has a lateral periphery, and the boundary regionsurrounds an entirety of the lateral periphery of the main-field region.A thickness of a majority of the relatively opaque material of themain-field region is reduced relative to a thickness of the majority ofthe relatively opaque material of the boundary region.

In one aspect, the invention encompasses a method of forming a reticle.A reticle substrate is provided which has a relatively transparent base,a phase-shifting material over the base, and a relatively opaquematerial over the phase-shifting material. The substrate comprises adefined main-field area having a lateral periphery, and a definedboundary area surrounding an entirety of the lateral periphery of themain-field area. The relatively opaque material within the main-fieldand boundary areas is defined to be first and second portions of therelatively opaque material, respectively. A first mask is provided whichcovers a region of the second portion of the relatively opaque materialand leaves a region of the first portion exposed. The exposed relativelyopaque material is thinned while the remainder of the relatively opaquematerial is protected with the mask. The utilization of the first maskduring the thinning of the relatively opaque material can be referred toas first level processing, and areas of the boundary region containingnon-primary patterns can also be exposed and thinned during the firstlevel processing. The mask is removed, and thereafter a second mask isformed and patterned over the main-field area. The second mask can alsobe formed and patterned over the boundary area. The pattern from thesecond mask is transferred into the main-field area to pattern thephase-shifting material.

In one aspect, the invention encompasses an intermediate constructionfor fabrication of a reticle. The construction includes a relativelytransparent base, and a relatively opaque material over the base. Theconstruction is divided between a main-field region where windowsutilized for patterning circuit elements of semiconductor constructionsare to be formed, and a boundary region where windows utilized forpatterning circuit elements of semiconductor constructions will not beformed. The main-field region has a lateral periphery, and the boundaryregion surrounds an entirety of the lateral periphery of the main-fieldregion. A majority of the relatively opaque material of the main-fieldregion has a reduced thickness relative to a majority of the relativelyopaque material of the boundary region.

In one aspect, the invention encompasses a reticle construction. Theconstruction includes a relatively transparent base, a phase-shiftingmaterial over the base, and a relatively opaque material over thephase-shifting material. The construction is divided amongst amain-field region where windows utilized for patterning semiconductorconstructions extend through the phase-shifting material, and a boundaryregion which lacks windows utilized for patterning semiconductorconstructions. The main-field region has a lateral periphery, and theboundary region surrounds an entirety of the lateral periphery of themain-field region. The majority of the boundary region has therelatively opaque material, and a minority of the main-field region hasthe relatively opaque material. The relatively opaque material of themain-field region is associated with a relatively opaque blocker, and isthinner than the relatively-opaque material of the boundary region. Theinvention can also include aspects in which at least some of theblockers have thickness of the relatively-opaque material which areabout the same as the thickness of the relatively-opaque material of themajority of the boundary region.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a diagrammatic, cross-sectional view of a reticle constructionand a semiconductor construction, with the reticle construction shownbeing utilized to pattern radiation directed toward the semiconductorconstruction in accordance with a prior art process.

FIG. 2 is a diagrammatic view of a surface of a prior art reticleconstruction.

FIG. 3 is a diagrammatic, cross-sectional view of a reticle constructionshown at a preliminary processing stage of an exemplary aspect of thepresent invention.

FIG. 4 is a diagrammatic view of a surface of the reticle constructionshown at the processing stage of FIG. 3, with the cross-section of FIG.3 being along the line 3-3 of FIG. 4.

FIG. 5 is a diagrammatic, cross-sectional view of the FIG. 3construction shown at a processing stage subsequent to that of FIG. 3.

FIG. 6 is a view of a surface of the reticle construction at theprocessing stage of FIG. 5, with the cross-section of FIG. 5 extendingalong the line 5-5 of FIG. 6.

FIG. 7 is a view of the FIG. 3 cross-section shown at a processing stagesubsequent to that of FIG. 5.

FIG. 8 is a view of the FIG. 3 cross-section shown at a processing stagesubsequent to that of FIG. 7.

FIG. 9 is a view of the FIG. 3 cross-section shown at a processing stagesubsequent to that of FIG. 8.

FIG. 10 is a view of the FIG. 3 cross-section shown at a processingstage subsequent to that of FIG. 9.

FIG. 11 is a view of the FIG. 3 cross-section shown at a processingstage subsequent to that of FIG. 10.

FIG. 12 is a view of the FIG. 3 cross-section shown at a processingstage subsequent to that of FIG. 11.

FIG. 13 is a view of a surface of a reticle construction shown at theprocessing stage of FIG. 12, with the cross-section of FIG. 12 beingalong the line 12-12 of FIG. 13.

FIG. 14 is a diagrammatic, fragmentary view of a surface of a reticleconstruction illustrating an exemplary pattern which can be formedwithin the main-field of a reticle.

FIG. 15 is a view of the FIG. 3 cross-section shown at a processingstage subsequent to that of FIG. 3 in accordance with a second exemplaryaspect of the present invention.

FIG. 16 is a view of the FIG. 3 cross-section shown at processing stagesubsequent to that of FIG. 15.

FIG. 17 is a view of the FIG. 3 cross-section shown at a processingstage subsequent to that of FIG. 16.

FIG. 18 is a view of the FIG. 3 cross-section shown at a processingstage subsequent to that of FIG. 17.

FIG. 19 is a view of the FIG. 3 cross-section shown at a processingstage subsequent to that of FIG. 18.

FIG. 20 is a view of the FIG. 3 cross-section shown at a processingstage subsequent to that of FIG. 11 in accordance with a third aspect ofthe invention.

FIG. 21 is a view of the FIG. 3 cross-section shown at a processingstage subsequent to that of FIG. 20.

FIG. 22 is a view of the FIG. 3 cross-section shown at a processingstage subsequent to that of FIG. 18 in accordance with a fourth aspectof the invention.

FIG. 23 is a view of the FIG. 3 cross-section shown at a processingstage subsequent to that of FIG. 22.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of theconstitutional purposes of the U.S. Patent Laws “to promote the progressof science and useful arts” (Article 1, Section 8).

One aspect of the present invention is a recognition that it can beadvantageous to utilize a different thickness of a relatively opaquematerial (such as, for example, chromium) over a main-field region of areticle than over a boundary region of the reticle. Specifically, it isrecognized that it is generally easier to form tight-tolerance patternsthrough thin materials than through thicker materials, and it isrecognized that the tight-tolerance patterns will generally be formedwithin the main-field region of a reticle construction rather thanwithin the boundary region. It is also recognized that it can beadvantageous to leave a thick portion of relatively opaque material overthe boundary region of a reticle construction in that such may do abetter job of blocking stray light than would a thin portion of therelatively opaque material.

An exemplary method of forming a reticle construction in accordance withan aspect of the present invention is described with reference to FIGS.3-13.

Referring initially to FIG. 3, a reticle substrate 50 is illustrated ata preliminary processing stage. The substrate 50 comprises a relativelytransparent base 52, a phase-shifting material 54 over the base, and arelatively opaque material 56 over the phase-shifting material. The term“relatively” is utilized throughout this document to indicate that amaterial has a particular quantitative property relative to another. Forinstance, the term “relatively opaque” is utilized to indicate that amaterial is more opaque than another material, with such other materialbeing referred to as a “relatively transparent” material.

The relatively transparent material 52 will typically comprise, consistessentially of, or consist of quartz. The relatively opaque material 56will typically comprise, consist essentially of, or consist of chromium.The phase-shifting material 54 will typically comprise, consistessentially of, or consist of one or more of silicon nitride, siliconoxynitride, molybdenum silicide and Mo_(w)Si_(x)N_(y)O_(z), where w, x,y and z are numbers greater than zero.

The substrate of FIG. 3 is shown to comprise a main-field region 58 anda boundary region 60 around the main-field region. A dashed border 59 isprovided to demarcate a boundary between the main-field region and theboundary region.

Material 56 comprises an upper surface 57, and FIG. 4 shows a view ofsubstrate 50 along such upper surface (i.e., shows a top view of theFIG. 3 substrate). The FIG. 4 view shows main-field region 58 having alateral periphery defined by demarcation line 59, and shows boundaryregion 60 entirely surrounding the lateral periphery of the main-fieldregion. Although the shown main-field region comprises a rectangularlateral periphery, it is to be understood that the lateral periphery ofthe main-field region can have any suitable shape.

A series of marks 62 are provided within boundary region 60 toillustrate the exemplary locations where alignment marks can ultimatelybe formed. Such alignment marks can be utilized for aligning variousmasks utilized during the fabrication of the reticle, as well as, oralternatively for aligning the reticle during utilization of the reticleto pattern light during semiconductor fabrication.

It is noted that the demarcation 59 between the main-field and boundaryregions of the substrate is provided for illustrative purposes, andfrequently the border between the main-field and boundary regions is nota well-defined line. Regardless, persons of ordinary skill in the artwill recognize that there is a main-field region of a reticle which canbe defined as a region where openings will ultimately be formed forgenerating a circuit element pattern within a radiation-imageablematerial during a semiconductor fabrication process, and that suchmain-field region will be spaced from the edges of the reticle by aregion which is not utilized to generate circuit element patterns withinthe radiation-imageable material. Persons of ordinary skill in the artwill also recognize that the spacing between the main-field region andthe edge of the reticle is a boundary region, and that such boundaryregion will typically extend entirely around the main-field region as isdiagrammatically illustrated in FIGS. 3 and 4.

Referring next to FIGS. 5 and 6, a patterned mask 64 is formed over theupper surface 57 of relatively opaque material 56. Mask 64 can comprise,consist essentially of, or consist of, for example, photoresist, and canbe formed into the shown pattern utilizing photolithographic processing.

Relatively opaque material 56 can be considered to comprise a firstportion within main-field 58, and a second portion within boundaryregion 60. Patterned mask 64 can cover a majority of the second portionof the relatively opaque material 56 while leaving a majority of thefirst portion of such relatively opaque material uncovered. In the shownaspect, the mask covers an entirety of the portion of the relativelyopaque material 56 within boundary region 60, and leaves an entirety ofthe relatively opaque material 56 within main-field region 58 uncovered(i.e., exposed). The locations 62 of the alignment markings are shown inFIG. 6 to illustrate an optional aspect in which the patterned mask 64covers all of the material 56 within the boundary region 60 except forlocations 62 where alignment marks are to be formed.

Referring next to FIG. 7, a pattern is transferred from mask 64 to theunderlying material 56. Such reduces a thickness of the relativelyopaque material of the main-field region 58 relative to a thickness ofthe relatively opaque material of the boundary region 60. If thelocations of the alignment marks 62 (FIG. 6) are exposed during suchetch, the locations of the alignment marks within boundary region 60will also be reduced in thickness.

Although an entirety of the material 56 within main-field region 58 isshown being reduced in thickness, it is to be understood that theinvention encompasses other aspects in which some of the material ofmain-field region 58 is protected by the patterned mask (discussed inmore detail below with reference to FIGS. 15 and 16), and accordinglywherein only some of the material within the main-field region isreduced in thickness during the processing of FIG. 7. Regardless, therewill typically be a majority of the relatively opaque material 56 withinthe main-field region which is reduced in thickness relative to amajority of the relatively opaque material 56 of the boundary region.

Referring to FIG. 8, the patterned mask 64 (FIG. 7) is removed, andmasking material 66 is formed over the relatively opaque material 56.Masking material 66 can comprise, consist essentially of, or consist of,for example, photoresist.

Referring to FIG. 9, a pattern is formed within masking material 66, andspecifically openings 68 are formed to extend through the material 66within the main-field region 58. The patterning of material 66 can beaccomplished by, for example, photolithographic processing. Thepatterned material 66 forms a patterned mask over material 56. Thepatterned material 64 (discussed above with reference to FIGS. 5 and 6),and the patterned material 66 can be referred to as first and secondpatterned masks, respectively, to distinguish the patterned masks fromone another.

Referring next to FIG. 10, openings 68 are extended into relativelyopaque material 56 with a suitable etch, and accordingly a pattern fromthe patterned mask of material 66 is transferred into the material 56 ofthe main-field region.

The thinning of material 56 of the main-field region can providenumerous advantages for the patterning of the material. For instance,the etch through thinned material 56 can require less time than would anetch through the original thickness of material 56. Further, etchesthrough thin materials can typically be conducted with fewercomplications and with tighter control of opening dimensions than canetches through thicker materials. Additionally, the etch through thethinned portions of material 56 can be conducted with thinner maskingmaterial 66 than can an etch through thicker portions of material 56 inmany cases. This is because the etch utilized for material 56 is seldom100% selective for material 56 relative to material 66. Accordingly,some of the masking material 66 is removed during the etching ofmaterial 56. The amount of masking material removed increases with theduration of the etch, which in turn increases with the thickness ofmaterial 56. Accordingly, the thinned material 56 can be etched with athinner mask 66 than could a thicker material 56. The thinner mask canfrequently be patterned with more stringent pattern control than can athicker mask. For instance, if photolithographic processing is utilizedto pattern a photoresist mask, the patterning can typically be conductedwith more stringent control of the final pattern when the maskingmaterial 66 is thin than when the masking material 66 is thick.

Referring to FIG. 11, masking material 66 (FIG. 10) is removed, andopenings 68 are extended through phase-shifting material 54. In someaspects, openings 68 can be extended into material 54 prior to removalof mask 66 (FIG. 10). In other aspects, mask 66 can first be removed,and subsequently material 56 can be utilized as a hard mask during anetch to extend the openings 68 into phase-shifting material 54.Extension of the openings into material 54 can be considered a transferof the original pattern formed within masking material 66 (FIG. 9) intomain-field region 58 to pattern the phase-shifting material 54. Theconstruction of FIG. 11 can be referred to as an intermediateconstruction for fabrication of a reticle.

In the shown aspect of the invention, the openings are extended to theupper surface of the relatively transparent base 52. It is to beunderstood, however, that the invention includes other aspects (notshown) in which at least some of the openings are extended onlypartially into phase-shifting material 54 so that the openings do notreach the surface of base 52, as well as aspects in which at least someof the openings are extended all the way through phase-shifting material54 and partially into base 52.

Referring next to FIG. 12, material 56 is subjected to an etch whichremoves the thinned portions of the material while leaving the thickenedportions of the material. The shown etch has removed material 56 frommain-field region 58, while leaving material 56 over boundary region 60.

FIG. 13 shows a top view of the construction of FIG. 12, and showsremaining phase-shifting material 54 patterned within main-field region58 to leave windows 68 within the main-field region. Such windows cansubsequently be utilized during a lithographic process, such as, forexample, a process analogous to that described above with reference toprior art FIG. 1.

The features shown in FIG. 13 are for diagrammatic purposes only, and itis to be understood that the relative scale of the features to the sizeof the reticle is much different than that which would typically beutilized. Specifically, there would typically be orders of magnitudemore individual features formed within the main-field regions of areticle than are shown in FIG. 13.

The alignment locations 62 are shown within boundary region 60 of theFIG. 13 structure, and alignment marks can be present in such alignmentlocations at the processing stage of FIG. 13. The alignment marks canhave been formed, for example, during the patterning conducted with thefirst masking material 64 (FIG. 7), and/or during the patterningconducted with the second masking material 66 (FIG. 10), and/or duringother process steps which are not shown. If alignment marks are formedduring the patterning of both the first and second masking materials,the locations of the alignment marks formed during the patterning of thesecond masking material can be at the same location as the locations ofthe alignment marks formed during the patterning of the first maskingmaterial or can be at different locations.

The invention can be utilized for applications in which all of therelatively opaque material 56 is removed from the main-field region. Inother aspects, the invention can be applied to fabrication processes inwhich some of the relatively opaque material is to be left within themain-field region.

An exemplary application in which it is desired to leave some of therelatively opaque material within the main-field region is describedwith reference to FIG. 14. Specifically, FIG. 14 shows a fragmentary topview of a reticle construction 100 comprising a base 102 and a pair ofcircuit patterns 104 and 106 over the base. The circuit patterns 104 and106 can, for example, correspond to patterns formed in phase-shiftingmaterial. The circuit patterns 104 and 106 comprise relatively thin andtightly packed components 108 and 110, respectively; and relatively wide(i.e., less tightly packed) features 112 and 114 respectively.Relatively opaque regions 120 and 122 are provided over the widerregions 112 and 114 to block stray-light effects and other undesiredeffects that may otherwise occur. In applications in which therelatively opaque material contains chromium, the components 120 and 122can be referred to as chrome blockers. It is common for a plurality ofchrome blockers to be provided within the main-field region of areticle.

FIGS. 15-21 illustrate exemplary methodologies by which relativelyopaque blockers (for example, chrome blockers) can be provided withinthe main-field region of a reticle while utilizing aspects of thepresent invention. Similar numbering will be utilized in referring toFIGS. 15-21 as was used above in referring to FIGS. 3-13, whereappropriate.

Referring initially to FIG. 15, such shows a reticle construction 150comprising the base 52, phase-shifting material 54, and relativelyopaque material 56 discussed previously. The reticle is divided amongsta defined main-field region 58 and the defined boundary region 60, witha border between such regions being diagrammatically illustrated withthe dashed line 59.

A patterned mask of material 152 is formed over material 56. Material152 can comprise the same masking material as described previously formaterial 64 of FIG. 5. The difference between the construction 150 ofFIG. 15 and the construction 50 of FIG. 5 is that there is a block ofthe masking material over main-field region 58 of the construction 150,whereas the entirety of the main-field is uncovered in the construction50 of FIG. 5.

Referring to FIG. 16, a pattern from the patterned masking material 152is transferred to the material 56 with an appropriate etch. Such thinsmaterial 56 within the main-field region but leaves thickenedprojections of material 56 where the material 56 is covered by maskingmaterial 152. One of such projections (labeled 154 in FIG. 16) is shownwithin the main-field region. Although only one projection is shown inthe main-field region, it is to be understood that there would typicallybe more than one of such projections in the main-field region.

Referring next to FIG. 17, masking material 152 (FIG. 16) is removed,and subsequently a patterned masking material 156 is formed overrelatively opaque material 56. The masking material 156 can be identicalto the material 66 discussed above with reference to FIG. 8. Patternedmasking material 156 has a plurality of openings 158 extendingtherethrough.

Referring next to FIG. 18, the openings 158 are extended throughmaterials 56 and 54 in processing analogous to that discussed aboveregarding FIGS. 10 and 11, and masking material 156 is removed.

Referring next to FIG. 19, thinned regions of material 56 are removed inprocessing analogous to that discussed above with reference to FIG. 12.Such leaves a segment of material 56 extending around the boundaryregion 60, and also leaves a segment of material 56 within themain-field region 58 as projection 154. The projection 154 of relativelyopaque material 56 can be utilized as a blocker, such as, for example,one of the blockers 120 and 122 discussed above with reference to FIG.14.

The processing discussed above with reference to FIGS. 15-19 illustratesone exemplary method for forming a blocker in accordance with an aspectof the present invention. FIGS. 20 and 21 illustrate another exemplarymethod for forming a blocker.

Referring initially to FIG. 20, such shows a reticle construction 200 ata processing stage subsequent to FIG. 11. A patterned mask of material202 has been formed over a thinned portion of relatively opaque material56 in main-field region 58. Material 202 can comprise any suitablemasking material, and in particular aspects will comprise, consistessentially of, or consist of photoresist.

Referring to FIG. 21, construction 200 is illustrated after it has beensubjected to processing analogous to that discussed above with referenceto FIG. 12 for removal of thinned material 56, and after subsequentremoval of masking material 202. The masking material 202 has protecteda portion of the thinned material 56 during the etching of the remainderof the thinned material 56. The protected portion of material 56 forms aprojection 204 within the main-field region 58. Such projection can be ablocker analogous to the blockers 120 and 122 discussed above withreference to FIG. 14.

FIGS. 22 and 23 illustrate another exemplary method for removing thethinned material 56 in the main-field region and forming a blocker. FIG.22 shows construction 150 of FIG. 18 at a processing stage subsequent toFIG. 18. Specifically a resist material 302 has been patterned to form aprotective mask over some portions of material 56 while leaving otherportions exposed. The material 302 can be patterned with, for example,an e-beam or laser mask pattern generation tool. The material 302 can beconsidered a third level, and the alignment of the third level to theunderlying levels can be accomplished utilizing alignment marks builtduring either or both of the first and second level processes whichformed the patterned material 56 of FIG. 18.

FIG. 23 shows construction 150 after exposed regions of the thinnedopaque material 56 are removed, and after subsequent removal of maskingmaterial 302. The patterned material 56 of FIG. 23 has arelatively-opaque blocker over the main-field region which isapproximately the same thickness as the majority of material 56 over theboundary region.

It is to be understood that processing analogous to that of FIGS. 22 and23 can also be utilized in applications in which blockers are not formedover the main-field region.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A method of forming a reticle, comprising: providing a reticlesubstrate having a relatively transparent base and a relatively opaquematerial over the base; the substrate comprising a main-field regionwhere windows utilized for patterning circuit elements of semiconductorconstructions are to be formed, and a boundary region where windowsutilized for patterning circuit elements of semiconductor constructionswill not be formed; the main-field region having a lateral periphery,the boundary region surrounding an entirety of the lateral periphery ofthe main-field region; and reducing a thickness of a majority of therelatively opaque material of the main-field region relative to athickness of a majority of the relatively opaque material of theboundary region.
 2. The method of claim 1 wherein the relativelytransparent base comprises quartz, and wherein the relatively opaquematerial comprises chromium.
 3. The method of claim 1 wherein thereticle base further comprises a phase shifting material between therelatively transparent base and the relatively opaque material.
 4. Themethod of claim 3 wherein the phase-shifting material comprises one moreof silicon nitride, silicon oxynitride, molybdenum silicide andMo_(w)Si_(x)N_(y)O_(z), where w, x, y and z are numbers greater than 0.5. The method of claim 3 wherein the relatively transparent basecomprises quartz, wherein the phase-shifting material comprisesmolybdenum and silicon, and wherein the relatively opaque materialcomprises chromium.
 6. The method of claim 5 wherein the phase-shiftingmaterial comprises molybdenum silicide.
 7. The method of claim 5 whereinthe phase-shifting material comprises Mo_(w)Si_(x)N_(y)O_(z), where w,x, y and z are numbers greater than
 0. 8. The method of claim 1 whereinthe thickness of an entirety of the relatively opaque material of themain-field region is reduced relative to the thickness of the relativelyopaque material of the boundary region.
 9. The method of claim 1 whereinsome of the relatively opaque material of the main-field region does nothave said reduced thickness relative to the majority of the relativelyopaque material of the boundary region.
 10. The method of claim 9further comprising forming said windows in the main-field region, andwherein said some of the relatively opaque material of the main-fieldregion which does not have said reduced thickness remains between atleast some of the windows.
 11. The method of claim 9 further comprisingforming said windows in the main-field region, and wherein said some ofthe relatively opaque material of the main-field region which does nothave said reduced thickness prior to formation of the windows is exposedto etching conditions during formation of the windows to reduce thethickness of said some of the relatively opaque material.
 12. The methodof claim 1 wherein the thickness of the majority of the relativelyopaque material of the main-field region is reduced relative to all ofthe relatively opaque material of the boundary region except forrelatively opaque material in locations where alignment marks areformed.
 13. A method of forming a reticle, comprising: providing areticle substrate having a relatively transparent base, a phase-shiftingmaterial over the base, and a relatively opaque material over thephase-shifting material; the substrate comprising a defined main-fieldregion having a lateral periphery, and a defined boundary regionsurrounding an entirety of the lateral periphery of the main-fieldregion; the relatively opaque material within the main-field andboundary regions being first and second portions of the relativelyopaque material, respectively; providing a first mask which covers amajority of the second portion of the relatively opaque material andleaves the first portion exposed; reducing the thickness of the firstportion of the relatively opaque material while protecting at least themajority of the second portion of the relatively opaque material withthe first mask; removing the first mask, and thereafter forming a secondmask which is patterned over the main-field region; and transferring thepattern from the second mask into the main-field region to pattern thephase-shifting material.
 14. The method of claim 13 further comprising:removing the second mask; and subjecting the reduced thicknessrelatively opaque material of the first portion to an etch after theremoval of the second mask, the etch removing the reduced thicknessrelatively opaque material of the first portion.
 15. The method of claim13 further comprising: removing the second mask; and utilizing thereticle to pattern light directed toward a semiconductor substrate; someof the reduced thickness relatively opaque material of the first portionremaining associated with the reticle during the utilization of thereticle to pattern the light.
 16. The method of claim 13 wherein therelatively transparent base comprises quartz, wherein the phase-shiftingmaterial comprises molybdenum and silicon, and wherein the relativelyopaque material comprises chromium.
 17. The method of claim 16 whereinthe phase-shifting material comprises molybdenum silicide.
 18. Themethod of claim 16 wherein the phase-shifting material comprisesMo_(w)Si_(x)N_(y)O_(z), where w, x, y and z are numbers greater than 0.19. The method of claim 13 wherein the transferring the pattern from thesecond mask into the main-field region comprises: transferring thepattern from the second mask into the first portion of the relativelyopaque material with a first etch; and utilizing the first portion ofthe relatively opaque material as a hard mask while transferring thepattern into the phase-shifting material with a second etch.
 20. Themethod of claim 19 wherein the second mask is removed after the firstetch and prior to the second etch.
 21. The method of claim 13 whereinthe first mask covers all of the second portion except for locations ofthe second portion where alignment marks are formed. 22-51. (canceled)52. A method of forming a reticle, comprising: providing a reticlesubstrate having a relatively transparent base, a phase-shiftingmaterial over the base, and a relatively opaque material over thephase-shifting material; the substrate comprising a defined main-fieldregion having a lateral periphery, and a defined boundary regionsurrounding an entirety of the lateral periphery of the main-fieldregion; the relatively opaque material within the main-field andboundary regions being first and second portions of the relativelyopaque material, respectively; providing a first mask which covers amajority of the second portion of the relatively opaque material andleaves the first portion exposed, the first mask having a firstthickness; reducing the thickness of the first portion of the relativelyopaque material while protecting at least the majority of the secondportion of the relatively opaque material with the first mask; removingthe first mask, and thereafter forming a second mask which is patternedover the main-field region, the second mask having a second thicknesswhich is less than the first thickness; and transferring the patternfrom the second mask into the main-field region to pattern thephase-shifting material.